Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates

Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

1277

終了ページ:

1280

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates Yvon Cordier, Marc Portail, Sébastien Chenot, Olivier Tottereau, Marcin Zielinski, Thierry Chassagne Materials Research Society	7 国際会議録 Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre Trans Tech Publications
2 国際会議録 Strain in 3C-SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates M. Zielinski, M. Portail, T. Chassagne, Y. Cordier Trans Tech Publications	8 国際会議録 Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications A. K. Sood, Y. R. Puri, F. W. Clarke, J. Deng, J. C. M. Hwang, S. K. Brierley, M. A. Khan, A. Dabiran, P. Chow, O. A. … SPIE - The International Society of Optical Engineering
3 国際会議録 CVD Growth of Graphene on 2Prime; 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity M. Portail, A. Michon, S. Vézian, D. Lefebvre, S. Chenot Trans Tech Publications	9 国際会議録 2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates K. Tonisch, W. Jatal, R. Granzner, M. Kittler, U. Baumann Trans Tech Publications
4 国際会議録 Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski Trans Tech Publications	10 国際会議録 CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut R. Dagher, B. Jouault, M. Paillet, M. Bayle, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, Y. Cordier, A. Michon Trans Tech Publications
5 国際会議録 Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE Fabrice Semond, Yvon Cordier, Franck Natali, Arnaud Le Louarn, Stéphane Vézian, Sylvain Joblot, Sébastien Chenot, … Materials Research Society	11 国際会議録 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier Trans Tech Publications
6 国際会議録 Structural and Morphological Characterization of 3C-SiC Films Grown on (111), (211) and (100) Silicon Substrates M. Portail, M. Nemoz, M. Zielinski, T. Chassagne Trans Tech Publications	12 国際会議録 Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12