Progress in GaN MOSFET Technology

Progress in GaN MOSFET Technology

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

1263

終了ページ:

1268

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

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1 国際会議録 Self-Aligned N+ Polysilicon-Gate GaN MOSFETs Matocha, K., Chow, T.P., Gutmann, R.J. Trans Tech Publications	7 国際会議録 Gallium Nitride Power Device Design Tradeoffs Matocha, K., Chow, T.P., Gutmann, R.J. Trans Tech Publications
2 国際会議録 Asymmetric Interface Densities on n and p Type GaN MOS Capacitors Huang, W., Khan, T., Chow, T.P. Trans Tech Publications	8 国際会議録 Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides Matocha, K., Chow, T.P., Gutmann, R.J. Trans Tech Publications
3 国際会議録 Progress in High Voltage SiC and GaN Power Switching Devices T.P. Chow Trans Tech Publications	9 国際会議録 SiC and GaN MOS Interfaces - Similarities and Differences T.P. Chow Trans Tech Publications
4 国際会議録 Schottky Barrier Modification on n-GaN Using a Shallow p-Type Implant Matocha,K., Chow,T.P., Lu,H., Bhat,I.B. Trans Tech Publications	10 国際会議録 930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing Wang, W., Banerjee, S., Chow, T.P., Gutmann, R.J. Trans Tech Publications
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6 国際会議録 Gallium Nitride Power Device Design Tradeoffs Matocha, K., Chow, T.P., Gutmann, R.J. Trans Tech Publications	12 国際会議録 Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures S. Chowdhury, C.W. Hitchcock, T.P. Chow Trans Tech Publications

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