RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.

RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

1107

終了ページ:

1110

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

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1 国際会議録 RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate Ogata, M., Katakami, S., Ono, S., Arai, M. Trans Tech Publications	7 国際会議録 Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiC Mitra, S., Tucker, J.B., Rao, M.V., Papanicolaou, N., Jones, K.A. Trans Tech Publications
2 国際会議録 Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate S. Katakami, M. Ogata, S. Ono, M. Arai Trans Tech Publications	8 国際会議録 Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiC Mitra, S., Tucker, J.B., Rao, Mulpuri V., Papanicolaou, N., Jones, K.A. Trans Tech Publications
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