Silicon Carbide Vertical JFET Operating at High Temperature

Silicon Carbide Vertical JFET Operating at High Temperature

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

1063

終了ページ:

1066

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 High Temperature Characterisation of 4H-SiC VJFET P. Bhatnagar, N.G. Wright, A. Horsfall, K.V. Vassilevski, C.M. Johnson, M.J. Uren, K.P. Hilton, A.G. Munday, A.J. Hydes Trans Tech Publications	7 国際会議録 Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing Vassilevski, K.V., Nikitina, I.P., Horsfall, A.B., Wright, N.G., Johnson, C.M., Malhan, R.K., Yamamoto, T. Trans Tech Publications
2 国際会議録 High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension K. Vassilevski, I. Nikitina, A. Horsfall, N.G. Wright, A.G. O'Neill, K.P. Hilton, A.G. Munday, A.J. Hydes, M.J. Uren, … Trans Tech Publications	8 国際会議録 Silicon Carbide Static Induction Transistor with Implanted Buried Gate K.V. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, A.G. O'Neill Trans Tech Publications
3 国際会議録 High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes P. Bhatnagar, N.G. Wright, A. Horsfall, C.M. Johnson, M.J. Uren, K.P. Hilton, A.G. Munday, A.J. Hydes Trans Tech Publications	9 国際会議録 Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation Vassilevski, K.V., Hedley, J., Horsfall, A.B., Johnson, C.M., Wright, N.G. Trans Tech Publications
4 国際会議録 Higll Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown Vassilevski, K.V., Nikitina, I.P., Bhatnagar, P., Horsfall, A.B., Wright, N.G., O'Neill, A.G., Uren, M.J., Hilton, K., … Trans Tech Publications	10 国際会議録 Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers P. Lark, K.V. Vassilevski, I. Nikitina, G.J. Phelps, A. Horsfall, N.G. Wright Trans Tech Publications
5 国際会議録 Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, A.J. Smith Trans Tech Publications	11 国際会議録 Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications
6 国際会議録 A Simple Non-Destructive Technique to Detect Micropipes in Silicon Carbide Morrison, D.J., Keir, A., Preston, I.H., Hilton, K.P., Uren, M.J., Johnson, C.M. Trans Tech Publications	12 国際会議録 Low Voltage Silicon Carbide Zener Diode Vassilevski, K.V., Zekentes, K., Horsfall, A.B., Johnson, C.M., Wright, N.G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12