Annealing Effect on Characteristics of p<sup>+</sup>n 4H-SIC Diode Formed by Al Ion Implantation

Annealing Effect on Characteristics of p⁺n 4H-SIC Diode Formed by Al Ion Implantation

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

1023

終了ページ:

1026

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Fabrication of pn-Junction Diode for N+ Implanted 4H-SiC(0001) Annealed by EBAS A. Egami, M. Shibagaki, A. Kumagai, K. Numajiri, S. Miyagawa, T. Kudo, S. Uchiumi, M. Satoh Trans Tech Publications	7 国際会議録 Impact of CF₄ Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing T. Sugimoto, M. Satoh, T. Nakamura, K. Mashimo, H. Doi Trans Tech Publications
2 国際会議録 Development and Investigation on ERAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing Shibagaki, M., Satoh, M, Kurematsu, Y., Numajiri, K., Watanabe, F., Haga, S., Miura, K., Suzuki, T., Miyagawa, S. Trans Tech Publications	8 国際会議録 Structural Defects Formed in Al-Implanted and Annealed 4H-SiC Jones, K.A., Zheleva, T.S., Kulkarni, V.N., Ervin, M.H., Derenge, M.A., Vispute, R.D. Trans Tech Publications
3 国際会議録 Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation M. Satoh, S. Nagata, T. Nakamura, H. Doi, M. Shibagaki Trans Tech Publications	9 国際会議録 The effect of annealing on argon implanted edge terminations for 4H-SiC schottky diodes Knights, A. P., Morrison, D. J., Wright, N. G., Johnson, C. M., O'Neill, A. G., Ortolland, S., Homewood, K. P., … MRS-Materials Research Society
4 国際会議録 Impact of EBAS Annealing on Sheet Resistance Reduction for Al-Implanted 4H-SiC(0001) Masami Shibagaki, Akihiro Egami, Akira Kumagai, Kenji Numajiri, Fumio Watanabe, Shigetaka Haga, Kuniaki Miura, Shingo … Materials Research Society	10 国際会議録 Avalanche Breakdown Characteristics of 4H-SiC Graded p⁺-n Junction Formed with Aluminum Ion-Implanted p⁺-Layer S. Ono, S. Katakami, M. Arai Trans Tech Publications
5 国際会議録 Encapsulating Annealing of N+ Implanted 4H-SiC by Diamond-Like-Carbon Film S. Miyagawa, T. Suzuki, T. Kudo, M. Satoh Trans Tech Publications	11 国際会議録 Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal Shibagaki, M., Kurematsu, Y., Watanabe, F., Haga, S., Miura, K., Suzuki, T., Satoh, M. Trans Tech Publications
6 国際会議録 Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures Satoh, M., Suzuki, T., Miyagawa, S. Trans Tech Publications	12 国際会議録 Electrical Activation of B⁺-Ions Implanted into 4H-SiC T. Tsirimpis, M. Krieger, H.B. Weber, G. Pensl Trans Tech Publications

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Annealing Effect on Characteristics of p+n 4H-SIC Diode Formed by Al Ion Implantation

類似資料:

Annealing Effect on Characteristics of p⁺n 4H-SIC Diode Formed by Al Ion Implantation