Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

995

終了ページ:

998

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

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1 国際会議録 Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes H. Niwa, G. Feng, J. Suda, T. Kimoto Trans Tech Publications	7 国際会議録 Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process H. Miyake, T. Kimoto, J. Suda Trans Tech Publications
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3 国際会議録 Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation N. Kaji, H. Niwa, J. Suda, T. Kimoto Trans Tech Publications	9 国際会議録 Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure M. Noborio, J. Suda, T. Kimoto Trans Tech Publications
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5 国際会議録 Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition Suda, J., Nakamura, S., Miura, M., Kimoto, T., Matsunami, H. Trans Tech Publications	11 国際会議録 Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs Y. Nanen, J. Suda, T. Kimoto Trans Tech Publications
6 国際会議録 Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction H. Miyake, T. Kimoto, J. Suda Trans Tech Publications	12 国際会議録 4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET) Kaido, J., Kimoto, T., Suda, J., Matsunami, H. Trans Tech Publications

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