Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

963

終了ページ:

966

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes S. Harada, Y. Namikawa Trans Tech Publications	7 国際会議録 Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes P.A. Ivanov, I.V. Grekhov, A.S. Potapov, N.D. Il'inskaya, O.I. Kon'kov Trans Tech Publications
2 国際会議録 Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure R. Sugie, M. Yoshikawa, S. Harada, Y. Namikawa Trans Tech Publications	8 国際会議録 Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers Izumi, S., Tsuchida, H., Tawara, T., Kamata, I., Izumi, K. Trans Tech Publications
3 国際会議録 Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation J. Hasegawa, K. Konishi, Y. Nakamura, K. Ohtsuka, S. Nakata Trans Tech Publications	9 国際会議録 Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes Fujiwara, H., Kimoto, T., Tojo, T., Matsunami, H. Trans Tech Publications
4 国際会議録 Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode H.J. Jung, S.B. Yun, I.H. Kang, J.H. Moon, W.J. Kim Trans Tech Publications	10 国際会議録 Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement Izumi, S., Fujisawa, H., Tawara, T., Ueno, K., Hiraoka, M. Trans Tech Publications
5 国際会議録 Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements Tsuji, T., Izumi, S., Ueda, A., Fujisawa, H., Ueno, K., Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	11 国際会議録 Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments Kim, D.H., Na, H.J., Jung, S.Y., Song, I.B., Um, M.Y., Song, H.K., Jeong, J.K., Lee, J.B., Kim, H.J. Trans Tech Publications
6 国際会議録 Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements Tsuji, T., Izumi, S., Ueda, A., Fujisawa, H., Ueno, K., Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	12 国際会議録 Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature Saitoh, H., Kimoto, T., Matsunami, H. Trans Tech Publications

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