Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 600-603
- 発行年:
- 2009
- パート:
- 2
- 開始ページ:
- 931
- 終了ページ:
- 934
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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9
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Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization
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11
国際会議録
SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
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