Applications-Based Design of SiC Technology

Applications-Based Design of SiC Technology

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

919

終了ページ:

924

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

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2 国際会議録 Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G. Trans Tech Publications	8 国際会議録 Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications
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5 国際会議録 4H-SiC Schottky Diodes with High On/Off Current Ratio Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications	11 国際会議録 Double Implanted Power MESFET Technology in 4H-SiC Horsfall, A.B., Ortolland, S., Wright, N.G., Johnson, C.M., Knights, A.P. Trans Tech Publications
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