Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance

Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

907

終了ページ:

912

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs Fukuda, K., Kato, M., Senzaki, J., Kojima, K., Suzuki, T. Trans Tech Publications	7 国際会議録 Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces K. Ariyoshi, S. Harada, J. Senzaki, T. Kojima, Y. Kobayashi Trans Tech Publications
2 国際会議録 Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET Harada, S., Okamoto, M., Yatsuo, T., Fukuda, K., Arai, K. Trans Tech Publications	8 国際会議録 Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K. Trans Tech Publications
3 国際会議録 Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face Fukuda, K., Suzuki, S., Senzaki, J., Cho, W.J., Tanaka, T., Arai, K. Trans Tech Publications	9 国際会議録 Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K. Trans Tech Publications
4 国際会議録 Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs Kosugi, R., Okamoto, M., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Arai, K. Trans Tech Publications	10 国際会議録 High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1o) Off-Angle Fukuda, K., Kato, M., Harada, S., Kojima, K. Trans Tech Publications
5 国際会議録 Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs Kosugi, R., Okamoto, M., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Arai, K. Trans Tech Publications	11 国際会議録 A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing Fukuda, K., Senzaki, J., Kushibe, M., Kojima, K., Kosugi, R., Suzuki, S., Harada, S., Suzuki, T., Tanaka, T., Arai, K. Trans Tech Publications
6 国際会議録 High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing Fukuda, K., Senzaki, J., Kojima, K., Suzuki, T. Trans Tech Publications	12 国際会議録 A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing Fukuda, K., Senzaki, J., Kushibe, M., Kojima, K., Kosugi, R., Suzuki, S., Harada, S., Suzuki, T., Tanaka, T., Arai, K. Trans Tech Publications

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