Blank Cover Image

High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600°C

著者名:
掲載資料名:
Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
シリーズ名:
Materials science forum
シリーズ巻号:
600-603
発行年:
2009
パート:
2
開始ページ:
739
終了ページ:
742
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 High Temperature Reliability of SiC n-MOS Devices up to 630oC

Ghosh, R.N., Loloee, R., Isaacs-Smith, T., Williams, J.R.

Trans Tech Publications
7 国際会議録 Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs

Ahyi, A.C., Wang, S.R., Williams, J.R.

Trans Tech Publications
2 国際会議録 Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600°C

R.N. Ghosh, R. Loloee

Trans Tech Publications
8 国際会議録 Improved Nickel Silicide Ohmic Contacts to n-Type 4H and 6H-SiC Using Nichrome

Luckowski, E. D., Williams, J. R., Bozack, M. J., Isaacs-Smith, T., Crofton, J.

MRS - Materials Research Society
3 国際会議録 Characterization of 4H-SiC MOS Capacitors by a Fast-Ramp Response Technique

Sudarshan, T. S., Madangarli, V. P., Gradinaru, G., Tin, C. C., Hu, R., Isaacs-Smith, T.

MRS - Materials Research Society
9 国際会議録 Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation

A.F. Basile, A.C. Ahyi, L.C. Feldman, J.R. Williams, P.M. Mooney

Trans Tech Publications
4 国際会議録 The Response of High-Voltage 4H-SiC p-n Junction Diodes to Different Edge-Termination Techniques

Oder, T. N., Tin, C. C., Williams, J. R., Isaacs-Smith, T., Madangarli, V., Sudarshan, T. S.

MRS - Materials Research Society
10 国際会議録 High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching

Saddow, S. E., Williams, J., Isaacs-Smith, T., Capano, M., Cooper, J. A., Mazzola, M. S., Hsieh, A. J., Casady, J. B.

Trans Tech Publications
5 国際会議録 A 600 V SiC Trench JFET

Gupta, R.N., Chang, H.R., Hanna, E., Bui, C.

Trans Tech Publications
11 国際会議録 Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface

Dhar, S., Wang, S.R., Ahyi, A.C., Isaacs-Smith, T., Pantelides, S.T., Williams, J.R., Feldman, L.C.

Trans Tech Publications
6 国際会議録 A 600 V SiC Trench JFET

Gupta, R.N., Chang, H.R., Hanna, E., Bui, C.

Trans Tech Publications
12 国際会議録 Comparison of High Field Characteristics of SiO2 and AlN Gate Insulators in 6H SiC MOS Capacitors

Madangarli, V. P., Sudarshan, T. S., Tin, C. C.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12