Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 600-603
- 発行年:
- 2009
- パート:
- 2
- 開始ページ:
- 731
- 終了ページ:
- 734
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Trans Tech Publications |
2
国際会議録
Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO2 on 4H-SiC
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
5
国際会議録
Improvement of SiO2/4H-SiC Interface Quality by Post-Oxidation Annealing in N2 at High-Temperatures
Trans Tech Publications |
11
国際会議録
Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis- Trimethylsilylmethane Precursor
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |