The Inefficiency of H2-Passivation as a Criterion for the Origin of SiC/SiO2 Deep Interface States -- A Theoretical Study

The Inefficiency of H₂-Passivation as a Criterion for the Origin of SiC/SiO₂ Deep Interface States -- A Theoretical Study

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

723

終了ページ:

726

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

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1 国際会議録 Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution? Thill, C., Knaup, J., Deak, P., Frauenheim, T., Choyke, W.J. Trans Tech Publications	7 国際会議録 Theoretical Studies on Defects in SiC Deak,P., Gali,A., Miro,J., Guiterrez,R., Sieck,A., Frauenheim,Th. Trans Tech Publications
2 国際会議録 The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO2 Defects Knaup, J. M., Deak, P., Gali, A., Hajnal, Z., Frauenheim, T., Choyke, J. W. Trans Tech Publications	8 国際会議録 Theoretical Study of Antisite Aggregation in α-SiC Rauls, E., Gali, A., Deak, P., Frauenheim, Th. Trans Tech Publications
3 国際会議録 A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC Deak, P., Gali, A., Hajnal, Z., Frauenheim, Th., Son, N.T., Janzen, E., Choyke, W.J., Ordejon, P. Trans Tech Publications	9 国際会議録 Deep-Level Transient Spectroscopy Characterization of Interface States in SiO₂/4H-SiC Structures Close to the Conduction Band Edge T. Hatakeyama, M. Sometani, K. Fukuda, H. Okumura, T. Kimoto Trans Tech Publications
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5 国際会議録 Visible and Deep Ultraviolet Study of SiC/SiO₂ Interface P. Borowicz, T. Gutt, T. Malachowski, M. Latek Trans Tech Publications	11 国際会議録 Deep States in SiO2/p-Type 4H-SiC Interface Yano,H., Inoue,N., Kimoto,T., Matsunami,H. Trans Tech Publications
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