Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face

Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

675

終了ページ:

678

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

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1 国際会議録 4H-SiC Lateral RESURF MOSFETs on Carbon-Face Substrates Okamoto, M., Suzuki, S., Kato, M., Yatsuo, T., Fukuda, K. Trans Tech Publications	7 国際会議録 Fabrication of 4H-SiC Double-Epitaxial MOSFETs Harada, S., Okamoto, M., Yatsuo, T., Adachi, K., Suzuki, K., Suzuki, S., Fukuda, K., Arai, K. Trans Tech Publications
2 国際会議録 Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K. Trans Tech Publications	8 国際会議録 Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs Kojima, K., Ohno, T., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Kushibe, M., Masahara, K., Ishida, Y., Takahashi, … Trans Tech Publications
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4 国際会議録 4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET Harada, S., Kato, M., Okamoto, M., Yatsuo, T., Fukuda, K., Arai, K. Trans Tech Publications	10 国際会議録 Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility Okamoto, M., Tanaka, M., Yatsuo, T., Fukuda, K. Trans Tech Publications
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6 国際会議録 4H-SiC p-Channel MOSFETs with Epi-Channel Structure M. Okamoto, T. Yatsuo, K. Fukuda, H. Okumura, K. Arai Trans Tech Publications	12 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications

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