Dynamical Simulation of SiO2/4H-SiC Interface on C-Face Oxidation Process: From First Principles

Dynamical Simulation of SiO2/4H-SiC Interface on C-Face Oxidation Process: From First Principles

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

2

開始ページ:

591

終了ページ:

596

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles T. Ohnuma, A. Miyashita, M. Iwasawa, M. Yoshikawa, H. Tsuchida Trans Tech Publications	7 国際会議録 The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements Ishida, Y., Takahashi, T., Okumura, H., Jikimoto, T., Tsuchida, H., Yoshikawa, M., Tomioka, Y., Midorikawa, M., … Trans Tech Publications
2 国際会議録 Dynamical Simulations of Dry Oxidation and NO Annealing of SiO₂/4H-SiC Interface on C-Face at 1500K: From First Principles T. Ohnuma, A. Miyashita, M. Yoshikawa, H. Tsuchida Trans Tech Publications	8 国際会議録 First Principles Study of Point Defects in Uranium Dioxide Y. Chen, M. Iwasawa, Y. Kaneta, T. Ohnuma, H.Y. Geng, M. Kinoshita Trans Tech Publications
3 国際会議録 Generation of Amorphous SiO2/SiC Interface Structure by the First-Principles Molecular Dynamics Simulation A. Miyashita, T. Ohnuma, M. Iwasawa, H. Tsuchida, M. Yoshikawa Trans Tech Publications	9 国際会議録 MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation Kimoto, T., Kanzaki, Y., Noborio, M., Kawano, H., Matsunami, H. Materials Research Society
4 国際会議録 Interface States in SiO2/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination Ohnuma, T., Tsuchida, H., Jikimoto, T., Miyashita, A., Yoshikawa, M. Trans Tech Publications	10 国際会議録 Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties T. Hosoi, D. Nagai, M. Sometani, T. Shimura, M. Takei, H. Watanabe Trans Tech Publications
5 国際会議録 Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters Ohnuma, T., Tsuchida, H., Jikimoto, T. Trans Tech Publications	11 国際会議録 SIMS Analyses of SiO2/4H-SiC(0001) Interface Yamashita, K., Kitabatake, M., Kusumoto, O., Takahashi, K., Uchida, M., Miyanaga, R., Itoh, H., Yoshikawa, M. Trans Tech Publications
6 国際会議録 The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements Ishida, Y., Takahashi, T., Okumura, H., Jikimoto, T., Tsuchida, H., Yoshikawa, M., Tomioka, Y., Midorikawa, M., … Trans Tech Publications	12 国際会議録 SIMS Analyses of SiO2/4H-SiC(0001) Interface Yamashita, K., Kitabatake, M., Kusumoto, O., Takahashi, K., Uchida, M., Miyanaga, R., Itoh, H., Yoshikawa, M. Trans Tech Publications

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