Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System

Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

553

終了ページ:

556

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC T. Hatakeyama, T. Suzuki, K. Ichinoseki, H. Matsuhata, K. Fukuda Trans Tech Publications	7 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications
2 国際会議録 Correlation between Surface Morphological Defects and Crystallographic Defects in SiC T. Hatakeyama, K. Ichinoseki, H. Yamaguchi, N. Sugiyama, H. Matsuhata Trans Tech Publications	8 国際会議録 Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC T. Hatakeyama, T. Suzuki, J. Senzaki, K. Fukuda, H. Matsuhata Trans Tech Publications
3 国際会議録 Surface metrology of silicon wafers using a femtosecond pulse laser T. Kwon, K.-N. Joo, S.-W. Kim Society of Photo-optical Instrumentation Engineers	9 国際会議録 Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping Hatakeyama, T., Watanabe, T., Senzaki, J., Kato, M., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications
4 国際会議録 Creation of carbide in critical CO2 by UV laser Arai, T., Uchida, T., Fukuda, N., Yoshida, Y., Maekawa, T. SPIE - The International Society of Optical Engineering	10 国際会議録 EXCIMER LASER INDUCED ETCHING OF SILICON-CARBIDE Murahara, M., Arai, H., Matsumura, T. Materials Research Society
5 国際会議録 Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide Senzaki, J., Fukuda, K., Ishida, Y., Tanaka, Y., Tanoue, H., Kobayashi, N., Tanaka, T., Arai, K. Materials Research Society	11 国際会議録 Microbotics based on microphysics:design and control strategy based on attractive force reduction Arai,F., Fukuda,T. SPIE-The International Society for Optical Engineering
6 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications	12 国際会議録 Optical surface analysis: a new technique for the inspection and metrology of optoelectronic films and wafers Bechtler, L., Velidandla, V. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12