Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers

Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

489

終了ページ:

492

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors A. Shrivastava, P.B. Klein, E.R. Glaser, J.D. Caldwell, A.V. Bolotnikov Trans Tech Publications	7 国際会議録 Long Carrier Lifetimes in n-Type 4H-SiC Epilayers P.B. Klein Trans Tech Publications
2 国際会議録 Inverted Pyramid Defects in 4H-SiC Epilayers A. Shrivastava, P.G. Muzykov, T.S. Sudarshan Trans Tech Publications	8 国際会議録 Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers P.B. Klein, R.L. Myers-Ward, K.K. Lew, B.L. VanMil, C.R. Eddy Jr. Trans Tech Publications
3 国際会議録 Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD A. Shrivastava, P.G. Muzykov, B. Pearman, S.M. Angel, T.S. Sudarshan Trans Tech Publications	9 国際会議録 Why are Only Some Basal plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy? Zhang, Z.H., Shrivastava, A., Sudarshan, T.S. Trans Tech Publications
4 国際会議録 Defects Limiting Minorty Carrier Lifetime in 4H-SiC Epilayers P. B. Klein, B. Shanabrook, S. Huh, A. Polyakov, M. Skowronski, J. Sumakeris, M. O'Loughlin Electrochemical Society	10 国際会議録 Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.J. Marinella, D.K. Schroder, P.B. Klein Trans Tech Publications
5 国際会議録 Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers N.A. Mahadik, R.E. Stahlbush, J.D. Caldwell, M.J. O'Loughlin, A.A. Burk Trans Tech Publications	11 国際会議録 CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers S.I. Maximenko, J.A. Freitas Jr., Y.N. Picard, P.B. Klein, R.L. Myers-Ward Trans Tech Publications
6 国際会議録 Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers Huh, S.W., Sumakeris, J.J., Polyakov, A.Y., Skowronski, M., Klein, P.B., Shanabrook, B.V., O'Loughlin, M.J. Trans Tech Publications	12 国際会議録 Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density S.U. Omar, H.Z. Song, T.S. Sudarshan, M.V.S. Chandrashekhar Trans Tech Publications

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