Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

485

終了ページ:

488

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.J. Maminella, D.K. Schroder, T. Isaacs-Smith Trans Tech Publications	7 国際会議録 Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals Neimontas, K., Kadys, A., Aleksiejunas, R., Jarasiunas, K., Chung, G., Sanchez, E.K., Loboda, M.J. Trans Tech Publications
2 国際会議録 Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.F. MacMillan, J.W. Wan Trans Tech Publications	8 国際会議録 Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates M.F. MacMillan, M.J. Loboda, J.W. Wan, G.Y. Chung, E.P. Carlson, M.J. Spaulding, D. Deese Trans Tech Publications
3 国際会議録 Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.F. MacMillan, J.W. Wan, D.M. Hansen Trans Tech Publications	9 国際会議録 Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System J.W. Wan, M.J. Loboda, M.F. MacMillan, G.Y. Chung, E.P. Carlson, V.M. Torres Trans Tech Publications
4 国際会議録 Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes G.Y. Chung, M.J. Loboda, S.G. Sundaresan, R. Singh Trans Tech Publications	10 国際会議録 A Study of Nitrogen Incorporation in PVT Growth of n+ 4H SiC Hansen, D.M., Chung, G., Loboda, M.J. Trans Tech Publications
5 国際会議録 Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates J. Zhang, G.Y. Chung, E.K. Sanchez, M.J. Loboda, S.G. Sundaresan Trans Tech Publications	11 国際会議録 A New Method of Mapping and Counting Micropipes In SiC Wafers Wan, J.W., Park, S.H., Chung, G., Carlson, E., Loboda, M.J. Trans Tech Publications
6 国際会議録 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer G.Y. Chung, M.J. Loboda, J. Zhang, J.W. Wan, E.P. Carlson Trans Tech Publications	12 国際会議録 Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers Huh, S.W., Sumakeris, J.J., Polyakov, A.Y., Skowronski, M., Klein, P.B., Shanabrook, B.V., O'Loughlin, M.J. Trans Tech Publications

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