Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces

Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

473

終了ページ:

476

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces Y. Ishida, T. Takahashi, H. Okumura, K. Arai, S. Yoshida Trans Tech Publications	7 国際会議録 Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure Masahara, K., Ishida, Y., Okumura, H., Takahashi, T., Kushibe, M., Ohno, T., Suzuki, T., Tanaka, T., Yoshida, S., Arai, … Trans Tech Publications
2 国際会議録 Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth Ishida, Y., Takahashi, T., Kojima, K., Okumura, H., Arai, K., Yoshida, S. Trans Tech Publications	8 国際会議録 Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena Ishida, Y., Takahashi, T., Okumura, H., Arai, K., Kimura, K., Nakamura, K., Yoshida, S. Trans Tech Publications
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