Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 600-603
- 発行年:
- 2009
- パート:
- 1
- 開始ページ:
- 345
- 終了ページ:
- 348
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
国際会議録
Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
11
国際会議録
Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing
Trans Tech Publications |
Electrochemical Society |