Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions

Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

341

終了ページ:

344

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates M. Katsuno, N. Ohtani, M. Nakabayashi, T. Fujimoto, H. Yashiro Trans Tech Publications	7 国際会議録 Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities M. Nakabayashi, T. Fujimoto, M. Katsuno, N. Ohtani, H. Tsuge Trans Tech Publications
2 国際会議録 Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals C. Taniguchi, A. Ichimura, N. Ohtani, M. Katsuno, T. Fujimoto Trans Tech Publications	8 国際会議録 Micropipe Formation Model via Surface Step Interaction Ohtani, N., Katsuno, M., Fujimoto, T., Aigo, T., Yashiro, H. Trans Tech Publications
3 国際会議録 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness Aigo, T., Sawamura, M., Fujimoto, T., Katsuno, M, Yashiro, H., Tsuge, H., Nakabayashi, M., Hoshino, T., Ohtani, N. Trans Tech Publications	9 国際会議録 Micropipe Formation Model via Surface Step Interaction Ohtani, N., Katsuno, M., Fujimoto, T., Aigo, T., Yashiro, H. Trans Tech Publications
4 国際会議録 Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules K. Ohtomo, N. Matsumoto, K. Ashida, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge, T. Fujimoto Trans Tech Publications	10 国際会議録 Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen- Doped 4H-SiC Substrate D. Fukunaga, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge, T. Fujimoto Trans Tech Publications
5 国際会議録 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots Fujimoto, T., Katsuno, M., Ohtani, N., Aigo, T., Yashiro, H. Trans Tech Publications	11 国際会議録 Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications H. Yashiro, T. Fujimoto, N. Ohtani, T. Hoshino, M. Katsuno Trans Tech Publications
6 国際会議録 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots Fujimoto, T., Katsuno, M., Ohtani, N., Aigo, T., Yashiro, H. Trans Tech Publications	12 国際会議録 Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality Fujimoto, T., Tsuge, H., Katsuno, M., Ohtani, N., Yashiro, H., Nakabayashi, M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12