Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS

Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

195

終了ページ:

198

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

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1 国際会議録 Growth Kinetics of 3C-SiC on α-SiC by VLS M. Soueidan, O. Kim-Hak, G. Ferro, N. Habka, B. Nsouli Trans Tech Publications	7 国際会議録 Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxiat Growth on on-axis α-SiC (0001) at Low Temperature Soueidan, M., Ferro, G., Cauwet, F., Mollet, L., Jacquier, C., Younes, G., Monteil, Y. Trans Tech Publications
2 国際会議録 Growth of SiC from a Liquid Phase at Low Temperature G. Ferro, M. Soueidan, O. Kim-Hak, F. Cauwet, Y. Monteil Trans Tech Publications	8 国際会議録 Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer S. Berckmans, L. Auvray, G. Ferro, F. Cauwet, V. Soulière Trans Tech Publications
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