Blank Cover Image

Electrical and Reliability Characteristics in Strained-Si MOSFETs

著者名:
掲載資料名:
Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing
シリーズ名:
ECS transactions
シリーズ巻号:
13(2)
発行年:
2008
開始ページ:
271
終了ページ:
277
総ページ数:
7
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776271 [1566776279]
言語:
英語
請求記号:
E23400/13-2
資料種別:
国際会議録

類似資料:

1 国際会議録 Electrical Characteristics of Deep-Submicron Vertical SiGe n-MOSFETs

Liu, K.-C., Quinones, E.J., Chen, X., Anantharam, B., Chen, X.D., Ray, S.K., Oswal, S.K., Banerjee, S.K.

Electrochemical Society
7 国際会議録 Hot Carrier Reliability of ALD HfSiON Gated MOSFETs with Different Compositions

H. Chen, S. Chen, C. Lu, C. Liu, F. Chiu

Electrochemical Society
2 国際会議録 Comparing the electrical characteristics and reliabilities of BJTs and MOSFETs between Pt and Ti contact silicide processes

Liu,K., Shang,L.

SPIE - The International Society for Optical Engineering
8 国際会議録 Structural, optical and electrical characteristics of silicon carbon nitride

Chen, L. C., Wu, C. T., Wen, C-Y., Wu, J-J., Liu, W. T., Liu, C. W.

MRS-Materials Research Society
3 国際会議録 Progress on the Numerical Calculation of Electrical Characteristics of Strained SiGe Channel P-MOSFET

Yu, Jie, Wang, Chong, Yang, Yu

Trans Tech Publications
9 国際会議録 Effect of Backside Cu Diffusion on the Electrical Characteristics of MOSFET

Tee,K.C., Prasad,K., Chan,L., See,A.K.

SPIE - The International Society for Optical Engineering
4 国際会議録 Electrical Characteristics of Low-Temperature Poly-Silicon Thin-Film Transistor Using a Stacked Pr2O3/SiOxNy Gate …

T. Pan, T. Wu, C. Chan, K. Chen, C. Lee

Electrochemical Society
10 国際会議録 Characteristics of Surface-Channel Strained Si1-yCy n-MOSFETs

Rim, K., Mitchell, T. O., Hoyt, J. L., Fountain, G., Gibbons, J. F.

MRS - Materials Research Society
5 国際会議録 Strained-Si MOSFETs for Low-Power Applications

T.K. Maiti, T. Das, P.S. Das, S.K. Sarkar, C.K. Maiti

Electrochemical Society
11 国際会議録 Electrical Properties and the Reliability of Silicon Nitride Gate Dielectrics Formed by Various Processes and Annealing Treatments

Chang-Liao, K-S., Pan, J.Y, Cheng, C.L., Wang, T.K

Electrochemical Society
6 国際会議録 Electrical Characteristics of Erbium Oxide Films on Silicon Substrate by Reactive RF Sputtering for Different Metal Gates

T. Pan, C. Chen, J. Lee, C. Hsieh, C. Lai

Electrochemical Society
12 国際会議録 Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs

T. Ohshima, S. Onoda, T. Kamada, K. Hotta, K. Kawata

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12