Impact of Thin La2O3 Insertion for HfO2 MOSFET

Impact of Thin La₂O₃ Insertion for HfO₂ MOSFET

著者名:

掲載資料名:

Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing

シリーズ名:

ECS transactions

シリーズ巻号:

13(2)

発行年:

2008

開始ページ:

29

終了ページ:

37

総ページ数:

9

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776271 [1566776279]

言語:

英語

請求記号:

E23400/13-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00001467
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	213th
会議開催地:	Phoenix, AZ, USA
会議開催年:	2008.05.18-2008.05.23
論文注記:	213th ECS Meeting, May 18 - May 23, 2008, Phoenix, AZ

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