Investigation of VT Shift Mechanism of High-K Dielectrics caused by Lanthanum Capping for NMOS and Tantalum Capping for PMOS Devices

Investigation of VT Shift Mechanism of High-K Dielectrics caused by Lanthanum Capping for NMOS and Tantalum Capping for PMOS Devices

著者名:

掲載資料名:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment

シリーズ名:

ECS transactions

シリーズ巻号:

13(1)

発行年:

2008

開始ページ:

123

終了ページ:

130

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776264 [1566776260]

言語:

英語

請求記号:

E23400/13-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00001466
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	213th
会議開催地:	Phoenix, AZ, USA
会議開催年:	2008.05.18-2008.05.23
論文注記:	213th ECS Meeting, May 18 - May 23, 2008, Phoenix, AZ

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