High-k Gate Stack Formation on Strained SiGe Substrate for MOSFET Applications

High-k Gate Stack Formation on Strained SiGe Substrate for MOSFET Applications

著者名:

掲載資料名:

ULSI process integration 5

シリーズ名:

ECS transactions

シリーズ巻号:

11(6)

発行年:

2007

開始ページ:

115

終了ページ:

123

総ページ数:

9

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775724 [1566775728]

言語:

英語

請求記号:

E23400/11-6

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013283
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	212th
会議開催地:	Washington, DC, USA
会議開催年:	2007.10.07-2007.10.12
論文注記:	212th ECS Meeting, October 7 - October 12, 2007, Washington, DC

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