Homoepitaxial Growth of Semi-Insulating 4H-SiC by Metal-Organic Precursors

Homoepitaxial Growth of Semi-Insulating 4H-SiC by Metal-Organic Precursors

著者名:

掲載資料名:

State-of-the-art program on compound semiconductors 47 (SOTAPOCS 47) and wide-bandgap semiconductor materials and devices 8

シリーズ名:

ECS transactions

シリーズ巻号:

11(5)

発行年:

2007

開始ページ:

53

終了ページ:

58

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775717 [156677571X]

言語:

英語

請求記号:

E23400/11-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013284
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	212th
会議開催地:	Washington, DC, USA
会議開催年:	2007.10.07-2007.10.12
論文注記:	212th ECS Meeting : State-of-the-Art Program on Compound Semiconductors 47 (SOTAPOCS 47), October 7 - October 12, 2007, Washington, DC

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