Comparison Between Harmonic Distortion in Circular Gate and Conventional SOI nMOSFET Using 0.13 µm Partially-Depleted SOI CMOS Technology

Comparison Between Harmonic Distortion in Circular Gate and Conventional SOI nMOSFET Using 0.13 µm Partially-Depleted SOI CMOS Technology

著者名:

掲載資料名:

Analytical and diagnostic techniques for semiconductor materials, devices and processes 7

シリーズ名:

ECS transactions

シリーズ巻号:

11(3)

発行年:

2007

開始ページ:

85

終了ページ:

96

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775694 [1566775698]

言語:

英語

請求記号:

E23400/11-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013285
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	212th
会議開催地:	Washington, DC, USA
会議開催年:	2007.10.07-2007.10.12
論文注記:	212th ECS Meeting, October 7 - October 12, 2007, Washington, DC

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