Gate Oxide Cleans on Single Wafer Tool

Gate Oxide Cleans on Single Wafer Tool

著者名:

掲載資料名:

Cleaning and surface conditioning technology in semiconductor device manufacturing 10

シリーズ名:

ECS transactions

シリーズ巻号:

11(2)

発行年:

2007

開始ページ:

257

終了ページ:

264

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775687 [156677568X]

言語:

英語

請求記号:

E23400/11-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013286
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	212th
会議開催地:	Washington, DC, USA
会議開催年:	2007.10.07-2007.10.12
論文注記:	212th ECS Meeting, October 7 - October 12, 2007, Washington, DC

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2 国際会議録 EVALUATION OF NEW MEGASONIC SYSTEM FOR SINGLE WAFER CLEANING Takeuchi, K., Tomozawa, A., Onishi, A., Tanzawa, A., Azuma, T., Umemura, S.-I., Wu, Y., Bran, M., Fraser, B. Electrochemical Society	8 国際会議録 AQUEOUS SINGLE PASS SINGLE WAFER AI/VIA CLEANING Verhaverbeke, S., Beaudry, C., Boelen, P. Electrochemical Society
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