Investigation of Hump Degradation by F-N stress for Narrow Width n-MOSFETs with Shallow Trench Isolation (STI)

Investigation of Hump Degradation by F-N stress for Narrow Width n-MOSFETs with Shallow Trench Isolation (STI)

著者名:

掲載資料名:

2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT)

シリーズ名:

ECS transactions

シリーズ巻号:

8(1)

発行年:

2007

開始ページ:

71

終了ページ:

75

総ページ数:

5

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781604238921 [1604238925]

言語:

英語

請求記号:

E23400/8-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013287
シリーズID:	PA00000034
会議名:	International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
回次:	2007
会議開催地:	Barga, Italy
会議開催年:	2007.07.28-2007.08.03
論文注記:	2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT), July 28 - August 3, 2007, Barga, Italy

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