Effects of Channel and Crystalline Orientations on the Electron Mobility in MOSFETs Fabricated on (114) and (5 5 12)-Silicon Substrates

Effects of Channel and Crystalline Orientations on the Electron Mobility in MOSFETs Fabricated on (114) and (5 5 12)-Silicon Substrates

著者名:

掲載資料名:

Student Posters (General)

シリーズ名:

ECS transactions

シリーズ巻号:

6(13)

発行年:

2007

開始ページ:

21

終了ページ:

27

総ページ数:

7

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781604238891 [1604238895]

言語:

英語

請求記号:

E23400/6-9 [13]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013300
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	211th
会議開催地:	Chicago, Illinois, USA
会議開催年:	2007.05.06-2007.05.10
論文注記:	211th ECS Meeting, May 6-May 10, 2007, Chicago, Illinois

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