Comparison of ZnO Dry Etching in High Density Inductively Coupled CH4/H2 and C2H6/H2-Based Chemistries

Comparison of ZnO Dry Etching in High Density Inductively Coupled CH₄/H₂ and C₂H₆/H₂-Based Chemistries

著者名:

掲載資料名:

State-of-the-Art Program on Compound Semiconductors XLIV

シリーズ名:

ECS transactions

シリーズ巻号:

2(5)

発行年:

2006

開始ページ:

209

終了ページ:

216

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774420 [156677442X]

言語:

英語

請求記号:

E23400/2-4 [5]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046577
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	209th
会議開催地:	Denver, Colorado, USA
会議開催年:	2006.05.07-2006.05.12
論文注記:	209th ECS Meeting, May 7-May 12, 2006, Denver, Colorado

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