Nano-Crystalline Grained Silicon Formed by Rapid Thermal Chemical Vapor Deposition for Advanced Gate Electrode Application

Nano-Crystalline Grained Silicon Formed by Rapid Thermal Chemical Vapor Deposition for Advanced Gate Electrode Application

著者名:

掲載資料名:

Thermal and Plasma CVD of Nanostructures

シリーズ名:

ECS transactions

シリーズ巻号:

1(29)

発行年:

2006

開始ページ:

1

終了ページ:

9

総ページ数:

9

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774819 [1566774810]

言語:

英語

請求記号:

E23400/1-26 [29]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00053417
シリーズID:	PA00000034
会議名:	ECS meeting
回次:	208th
会議開催地:	Los Angeles, California, USA
会議開催年:	2005.10.16-2005.10.21
論文注記:	208th ECS Meeting, October 16-October 21, 2005, Los Angeles, California

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