Silicon Carbide Thin Films using 1,3-Disilabutane Single Precursor for MEMS Applications - A Review

Silicon Carbide Thin Films using 1,3-Disilabutane Single Precursor for MEMS Applications - A Review

著者名:

掲載資料名:

Chemical Sensors 7 and MEMS/NEMS 7

シリーズ名:

ECS transactions

シリーズ巻号:

3(10)

発行年:

2006

開始ページ:

267

終了ページ:

280

総ページ数:

14

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775106 [1566775108]

言語:

英語

請求記号:

E23400/3-10

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047118
シリーズID:	PA00000034
論文注記:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

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1 国際会議録 Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane Lee, S. Y., Lee, K. -W., Kim, Y. Trans Tech Publications	7 国際会議録 Diamond-Like Carbon Films for Silicon Passivation in Microelectromechanical Devices Houston, M. R., Howe, R. T., Komvopoulos, K., Maboudian, R. Materials Research Society
2 国際会議録 654a. Silicon Carbide Micro/Nano Systems for Extreme Environment Applications Roya Maboudian, C. Carraro American Institute of Chemical Engineers	8 国際会議録 6aw. Growth, Characterization, and Material Property Control of Silicon Carbide Thin Films for Micro- and Nanosystems Christopher S. Roper American Institute of Chemical Engineers
3 国際会議録 Growth and Characterization of Sic Films Deposited in a Large-Scale Lpcvd Reactor Christopher S. Roper, Roger T. Howe, Roya Maboudian American Institute of Chemical Engineers	9 国際会議録 LPCVD POLYCRYSTALLINE SILICON THIN FILMS: THE EVOLUTION OF STRUCTURE, TEXTURE AND STRESS Krulevitch, R., Nguyen, Tai D., Johnson, G.C., Howe, R.T., Wenk, H.R., Gronsky, R. Materials Research Society
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6 国際会議録 *CHARACTERIZATION OF THIN FILMS USING MICROMECHANICAL STRUCTURES Pratt, R.I., Johnson, G.C., Howe, R.T., Nikkel, Jr., D.J. Materials Research Society	12 国際会議録 MOCVD of RuO2 Thin Films Using (?6-benzene)(?4-1,3-cyclohexadiene)Ru Hwang, H.-N., Han, K.C., An, K.-S., Chung, T.-M., Kim, Y. Electrochemical Society

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