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Parasitic Electrostatic Capacitances in Si/SiGe n-HFET

著者名:
掲載資料名:
SiGe and Ge, materials, processing, and devices
シリーズ名:
ECS transactions
シリーズ巻号:
3(7)
発行年:
2006
開始ページ:
989
終了ページ:
999
総ページ数:
11
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775076 [1566775078]
言語:
英語
請求記号:
E23400/3-7
資料種別:
国際会議録

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