Effects of Proton Radiation on Device Modeling of SiGe Power HBTs

Effects of Proton Radiation on Device Modeling of SiGe Power HBTs

著者名:

掲載資料名:

SiGe and Ge, materials, processing, and devices

シリーズ名:

ECS transactions

シリーズ巻号:

3(7)

発行年:

2006

開始ページ:

919

終了ページ:

925

総ページ数:

7

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775076 [1566775078]

言語:

英語

請求記号:

E23400/3-7

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047115
シリーズID:	PA00000034
会議名:	SiGe and Ge Materials, Processing, and Devices Symposium ; Joint International Electrochemical Society Meeting ; Meeting of the Electrochemical Society ; Congreso de la Sociedad Mexicana de Electroquimica
回次:	2nd ; 2006 ; 210th ; 21st
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03
論文注記:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

類似資料:

1 国際会議録 Microwave noise in III-V- and SiGe-based HBTs: comparison, trends, and numbers (Invited Paper) Sakalas, P., Schroter, M., Racanelli, M. SPIE - The International Society of Optical Engineering	7 国際会議録 Low-Temperature Modeling of SiGe HBTs Using SCORPIO Richey, D.M., Cressler, J.D., Joseph, A.J., Jaeger, R.C. Electrochemical Society
2 国際会議録 RF Modeling of Large Gate-Width Multi-Finger Si/SiGe Power MODFETs H. Yuan, N. Jiang, E. Croke, Z. Ma Electrochemical Society	8 国際会議録 Bandgap Engineering in SiGe:C HBTs For Power Amplifier Applications S. Jouan, A. Talbot, S. Haendler, P. Mans, A. Perrotin Electrochemical Society
3 国際会議録 (5.3) 9:10 - 9:40 AM - Correlation Between SiGe HBT Doping Profile and Operation Configuration (Invited) Ma, Z., Jiang, N., Wang, G. (U.WI-Madison) Electrochemical Society	9 国際会議録 An Analytical Comparison of GaAs and InP-based HBTs Including Thermal Effects Hader, M.A., Gerner, F.M., Kumar, T., Cahay, M.M., Conklin, T., Roenker, K.P. Electrochemical Society
4 国際会議録 Fabrication of Reduced Area InGaAs/InP HBT and DHBT Devices Kopf, R.E., Wang, Y.-C., Hamm, R.A., Ryan, R.W, Tate, A., Melendes, M.A., Pullela, R., Georgiou, G., Mattia, J.-P., … Electrochemical Society	10 国際会議録 Indium Phosphide HBT Device Parameter Extraction for Spice Modeling and Process Optimization Weimann, N.G., Kopf, R.F., Hamm, R.A., Kuo, J.-M., Lee, Q., Melendes, M., Melendes, R., Ryan, R.W., Tate, A., Chen, Y.K. Electrochemical Society
5 国際会議録 Modelling of Self - Heating Effects in SiGe-HBTS Senapati, B., Maiti, C.K. SPIE-The International Society for Optical Engineering	11 国際会議録 Characteristic Influence of DC Bias on SiGe HBT Linearity and Power Gain under Different Operation Configurations G. Qin, G. Wang, Z. Ma Electrochemical Society
6 国際会議録 The Effects of Ionizing Radiation on SiGe HBTs Operated at 77 K Babcock, J.A., Cressler, J.D., Clark, S.D., Vempati, L.S., Harame, D.L. Electrochemical Society	12 国際会議録 Some effects of interaction of laser radiation with small particles Zakharov,S.D., Kazaryan,M.A., Korotkov,N.P. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12