Issues and Opportunities for Complementary SiGe HBT Technology
- 著者名:
- J.D. Cressler
- 掲載資料名:
- SiGe and Ge, materials, processing, and devices
- シリーズ名:
- ECS transactions
- シリーズ巻号:
- 3(7)
- 発行年:
- 2006
- 開始ページ:
- 893
- 終了ページ:
- 911
- 総ページ数:
- 19
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775076 [1566775078]
- 言語:
- 英語
- 請求記号:
- E23400/3-7
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
Electrochemical Society |
3
国際会議録
The Cryogenic Operation of SiGe Heterojunction Bipolar Transistors: Status and Opportunities
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
10
国際会議録
Temperature Dependence of Early Voltage and Current Gain-Early Voltage Product in SiGe HBTs
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |