Strain Degradation in Strained-Si Layers Far Thicker than the Critical Thickness Grown on Relaxed Si0.65Ge0.35 Layers

Strain Degradation in Strained-Si Layers Far Thicker than the Critical Thickness Grown on Relaxed Si_0.65Ge_0.35 Layers

著者名:

掲載資料名:

SiGe and Ge, materials, processing, and devices

シリーズ名:

ECS transactions

シリーズ巻号:

3(7)

発行年:

2006

開始ページ:

411

終了ページ:

420

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775076 [1566775078]

言語:

英語

請求記号:

E23400/3-7

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047115
シリーズID:	PA00000034
会議名:	SiGe and Ge Materials, Processing, and Devices Symposium ; Joint International Electrochemical Society Meeting ; Meeting of the Electrochemical Society ; Congreso de la Sociedad Mexicana de Electroquimica
回次:	2nd ; 2006 ; 210th ; 21st
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03
論文注記:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

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