Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography

Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography

著者名:

掲載資料名:

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

シリーズ名:

ECS transactions

シリーズ巻号:

16(10)

発行年:

2008

開始ページ:

539

終了ページ:

543

総ページ数:

5

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776561 [1566776562]

言語:

英語

請求記号:

E23400/16-10

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047173
シリーズID:	PA00000034
会議名:	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium ; PRiME Joint International Conference
回次:	3rd ; 2008
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2008.10.12-2008.10.17
論文注記:	3rd SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12-17, 2008

類似資料:

1 国際会議録 Application of Synchrotron X-ray Diffraction Methods to Gate Stacks of Advanced MOS Devices T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, A. Ogura Electrochemical Society	7 国際会議録 Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy X. Wu, J. Uchikoshi, T. Hirokane, R. Yamada, K. Arima Electrochemical Society
2 国際会議録 Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction T. Shimura, T. Matsumiya, N. Morimoto, T. Hosoi, K. Kajiwara Trans Tech Publications	8 国際会議録 Analysis of Ordered Structure of Buried Oxide Layers in SIMOX Wafers Shimura, T, Ejiri, R, Hosoi, T, Umeno, M Electrochemical Society
3 国際会議録 Oxidation Saturation of SiGe Alloy on Silicon-on-Insulator Wafers T. Shimura, M. Shimizu, S. Horiuchi, H. Watanabe, K. Yasutake Electrochemical Society	9 国際会議録 Wafer Bonding and Layer Transfer Approach for Strained Silicon-on-Insulator(SSOI) Fabrication Singh, R., Radu, I., Reiche, M., Gosele, U., Christiansen, S.H., Webb, D. Electrochemical Society
4 国際会議録 Epitaxially Ordered Structure in the Buried Oxide Layer of SIMOX Wafers Shimura, T., Hosoi, T., Umeno, M. Electrochemical Society	10 国際会議録 Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography T. Yamashita, H. Matsuhata, Y. Miyasaka, K. Momose, T. Sato Trans Tech Publications
5 国際会議録 Strained Silicon on Insulator Wafers Made by the Smart CutTM Technology Ghyselen, B., Bogumilowicz, Y., Aulnette, C., Abbadie, A., Osternaud, B., Besson, P., Daval, N., Andrieu, F., … Materials Research Society	11 国際会議録 Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography T. Yamashita, H. Matsuhata, Y. Miyasaka, H. Ohshima, M. Sekine Trans Tech Publications
6 国際会議録 X-Ray Reciprocal Space Mapping and Synchrotron Radiation Topography of Strained Si/Si₁₋x Gex on Bonded SOI T. Ma, H. Tu, G. Hu, B. Shao, A. Liu Electrochemical Society	12 国際会議録 INFLUENCE OF BONDING TEMPERATURE ON THE ELECTRICAL PROPERTIES OF SI/SIO₂ INTERFACES IN BONDED SILICON-ON-INSULATOR WAFERS L. Ling, L. Zhong, A. Buczkowski, Z.J. Radminski, T. Abe, F. Shimura Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12