Reliability of Ti-based Gate Dielectrics on strained-Si0.91Ge0.09 and Ge under Dynamic and AC Stressing
類似資料:
Electrochemical Society |
Narosa Publishing House |
Electrochemical Society |
8
国際会議録
Initial Strain Relaxation in Si0.91Ge0.09/Si Superlattice Structures Via Misfit-Dislocations
MRS - Materials Research Society |
Narosa Publishing House |
SPIE - The International Society for Optical Engineering |
Materials Research Society |
10
国際会議録
Effect of dopants on the photorefractive effect in 0.91 Pb(Zn1/3Nb2/3)O3-0.09PbTiO3 (Invited Paper)
SPIE - The International Society of Optical Engineering |
5
国際会議録
(4.27) 8:43 - 8:46 PM - Titanium Dioxide Gate Dielectric for Strained-Germanium Heterolayers
Electrochemical Society |
11
国際会議録
Improved images by a 3.5-MHz array probe using 0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO3 single crystal
SPIE - The International Society for Optical Engineering |
6
国際会議録
Fabrication and Electrical Properties of Grain-Oriented 0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO3 Ceramics
Trans Tech Publications |
SPIE-The International Society for Optical Engineering, Narosa |