Comments About the Mechanism of Porous Layer Growth: Case of InP

Comments About the Mechanism of Porous Layer Growth: Case of InP

著者名:

掲載資料名:

Porous semiconductors : a symposium held in memory of Vitali Parkhutik and Volker Lehmann

シリーズ名:

ECS transactions

シリーズ巻号:

16(3)

発行年:

2008

開始ページ:

411

終了ページ:

416

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776493 [156677649X]

言語:

英語

請求記号:

E23400/16-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047169
シリーズID:	PA00000034
会議名:	International Symposium on Porous Semiconductors ; Meeting of the Electrochemical Society
回次:	2008 ; 214th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2008.10.12-2008.10.17
論文注記:	International Symposium on Porous Semiconductors held in Honolulu, Hawaii, as part of the 214th Meeting of the Electrochemical Socity, on October 12-17, 2008

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