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Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon

著者名:
掲載資料名:
High Purity Silicon 10
シリーズ名:
ECS transactions
シリーズ巻号:
16(6)
発行年:
2008
開始ページ:
249
終了ページ:
259
総ページ数:
11
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776523 [156677652X]
言語:
英語
請求記号:
E23400/16-6
資料種別:
国際会議録

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