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Novel Highly Volatile MOCVD Precursors for Ta2O5 and Nb2O5 Thin Films

著者名:
掲載資料名:
Physics and technology of high-k gate dielectrics 6
シリーズ名:
ECS transactions
シリーズ巻号:
16(5)
発行年:
2008
開始ページ:
243
終了ページ:
251
総ページ数:
9
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776516 [1566776511]
言語:
英語
請求記号:
E23400/16-5
資料種別:
国際会議録

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