Trapping in 1nm EOT High-κ / MG

Trapping in 1nm EOT High-κ / MG

著者名:

掲載資料名:

Physics and technology of high-k gate dielectrics 6

シリーズ名:

ECS transactions

シリーズ巻号:

16(5)

発行年:

2008

開始ページ:

77

終了ページ:

84

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776516 [1566776511]

言語:

英語

請求記号:

E23400/16-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049541
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
回次:	6th ; 214th
会議開催地:	Honolulu, HI, USA
会議開催年:	2008.10.12-2008.10.17
論文注記:	The sixth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Honolulu, Hawaii, October 13 to 15, 2008. Invited paper

類似資料:

1 国際会議録 High-κ Characterization by RFCV E. San Andres, L. Pantisano, P. Roussel, M. Toledano-Luque, L. Trojman Electrochemical Society	7 国際会議録 Influence of Process Parameters on Resistive Switching in MOCVD NiO Films X.P. Wang, D.J. Wouters, M. Toeller, J. Meersschaut, L. Goux, Y.Y. Chen, B. Govoreanu, L. Pantisano, R. Degraeve, M. … Materials Research Society
2 国際会議録 Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO₂ and High-k Dielectrics S. Sahhaf, R. Degraeve, M.B. Zahid, G. Groeseneken Materials Research Society	8 国際会議録 Feasibility of Dipole Based Work Function Tuning for Sub-1nm EOT Metal Gated High-K Stacks V. Misra, R. Jha, B. Chen, J. Lee, B. Lee Electrochemical Society
3 国際会議録 Impact of High-k Properties on MOSFET Electrical Characteristics Pantisano, Ll., Ragnarsson, L. -A., Houssa, M., Degraeve, R., Groeseneken, G., Schram, T., Degendt, S., Heyns, M., … Springer	9 国際会議録 Low AOX Process for Bleaching High Kappa Pulps; O1 PROCESSTM Bleaching Mendiratta, S.K., Cawlfield, D.W., Ward, L.R. American Institute of Chemical Engineers
4 国際会議録 On the impact of high-K properties (and defects) on MOSFET el ectrical characteristics (invited paper) Pantisano, L., Afanas'ev, V., Ragnarsson, L-A., Houssa, M., Degraeve, R., Groeseneken, G., Schram, T., DeGendt, S., … Electrochemical Society	10 国際会議録 In-Situ Studies of Interfacial Bonding of High-κ Dielectrics for CMOS Beyond 22nm R.M. Wallace Electrochemical Society
5 国際会議録 Electrical Characteristics of Metal/High-κ MOS Devices Using Effective Oxygen Control for Sub-1nm EOT K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii Electrochemical Society	11 国際会議録 1/f Noise as a Tool to Assess Fermi Level Pinning (EF) at the HfO₂/poly-Si Interface in High-k n-MOSFETs P. Srinivasan, E. Simoen, L. Pantisano, C. Claeys, D. Misra Electrochemical Society
6 国際会議録 Scaling Down of MOCVD HfSiON to 1nm EOT X. Shi, A. Rothschild, J.L. Everaert, S. Van Elshocht, L. Date Electrochemical Society	12 国際会議録 Effect of Nitridatien on 1/f Noise in n-MOSFETs with High-k Dielectric P. Srinivasan, E. Simoen, L. Pantisano, C. L. Claeys, D. Misra, C. Rittersma Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12