Determination of the Coulomb Scattering Parameter (Alpha) for ALD HfO2/TiN Gate n and p-MOSFETs Using Negative Bias Temperature Stress

Determination of the Coulomb Scattering Parameter (Alpha) for ALD HfO2/TiN Gate n and p-MOSFETs Using Negative Bias Temperature Stress

著者名:

掲載資料名:

Physics and technology of high-k gate dielectrics 5

シリーズ名:

ECS transactions

シリーズ巻号:

11(4)

発行年:

2007

開始ページ:

639

終了ページ:

644

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775700 [1566775701]

言語:

英語

請求記号:

E23400/11-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049542
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
回次:	5th ; 212th
会議開催地:	Washington, D.C., USA
会議開催年:	2007.10.08-2007.10.10
論文注記:	Fifth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Washington, DC from October 8 to 10, 200

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