Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment | 東京工業大学附属図書館文献データベース

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Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment

著者名:: P. McIntyre
掲載資料名:: Physics and technology of high-k gate dielectrics 5
シリーズ名:: ECS transactions
シリーズ巻号:: 11(4)
発行年:: 2007
開始ページ:: 235
終了ページ:: 249
総ページ数:: 15
出版情報:: Pennington, NJ: Electrochemical Society
ISSN:: 19385862
ISBN:: 9781566775700 [1566775701]
言語:: 英語
請求記号:: E23400/11-4
資料種別:: 国際会議録

詳細

TDL書誌ID:	ZA00049542
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
回次:	5th ; 212th
会議開催地:	Washington, D.C., USA
会議開催年:	2007.10.08-2007.10.10
論文注記:	Fifth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Washington, DC from October 8 to 10, 200

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