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Improvement of leakage current and optical properties of GaN-based LEDs by chemical etching of p-GaN

著者名:
  • T.-Y. Park ( Gwangju Institute of Science and Technology, United States )
  • C.-H. Cho ( Gwangju Institute of Science and Technology, United States )
  • I.-K. Park ( Gwangju Institute of Science and Technology, United States )
  • S.-J. Park ( Gwangju Institute of Science and Technology, United States )
掲載資料名:
Eighth International Conference on Solid State Lighting : 11-13 August 2008, San Diego, California, USA
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
7058
発行年:
2008
開始ページ:
70580W-1
終了ページ:
70580W-7
総ページ数:
7
出版情報:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819472786 [0819472786]
言語:
英語
請求記号:
P63600/7058
資料種別:
国際会議録

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