Image placement error of photomask due to pattern loading effect: analysis and correction technique for sub-45 nm node

Image placement error of photomask due to pattern loading effect: analysis and correction technique for sub-45 nm node

著者名:

J. Choi ( Samsung Electronics Co., Ltd., South Korea )
S. H. Lee ( Samsung Electronics Co., Ltd., South Korea )
D. Nam ( Samsung Electronics Co., Ltd., South Korea )
B. G. Kim ( Samsung Electronics Co., Ltd., South Korea )
S. -G. Woo ( Samsung Electronics Co., Ltd., South Korea )

掲載資料名:

Photomask and next-generation lithography mask technology XV

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

7028

発行年:

2008

巻:

2

開始ページ:

70281X-1

終了ページ:

70281X-13

総ページ数:

13

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819472434 [0819472433]

言語:

英語

請求記号:

P63600/7028

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052659
シリーズID:	PA00000029
会議名:	Photomask and Next-Generation Lithography Mask Technology
回次:	2008 : 15th
会議開催地:	Yokohama, Japan
会議開催年:	2008.04.16-2008.04.18
論文注記:	Photomask and next-generation lithography mask technology XV, 16-18 April 2008, Yokohama, Japan - Poster Session 5b: Writing Technology, 70281X, 7028-67

類似資料:

1 国際会議録 Requirements of photomask registration for the 45nm node and beyond: Is it possible? J. Choi, H. B. Kim, S. H. Lee, D. H. Lee, H. Y. Jeong Society of Photo-optical Instrumentation Engineers	7 国際会議録 Requirements of nano-machining repair system for 45-nm node S. -H. Lee, H. -S. Kim, H. -S. Shim, S. -Y. Lee, G. -B. Kim, H. -J. Kwon, S. -G. Woo, H. -K. Cho SPIE - The International Society of Optical Engineering
2 国際会議録 Optical performance enhancement technique for 45-nm node with binary mask J. -S. Jung, H. -B. Kim, J. -W. Lee, S. G. Woo, H. -K. Cho SPIE - The International Society of Optical Engineering	8 国際会議録 Study of mask structure for 45-nm node based on manufacturability and lithographic performance J. G. Doh, C. H. Park, Y. S. Moon, B. H. Kim, S. W. Kwon, S. Y. Choi, S. H. Kim, S. Y. Kim, B. G. Kim, S. G. Woo, H. K. … SPIE - The International Society of Optical Engineering
3 国際会議録 Improvement of mask CD uniformity for below 45-nm node technology H. Lee, S. Bae, J. Park, D. Nam, B. Kim Society of Photo-optical Instrumentation Engineers	9 国際会議録 Phase-shifted assist feature OPC for sub-45-nm node optical lithography G. Yoon, H. Kim, J. Lee, S. Choi, W. Han SPIE - The International Society of Optical Engineering
4 国際会議録 Improvement of pattern collapse in sub-100 nm nodes Jung, M.-H., Lee, S.-H., Kim, H.-W., Woo, S.-G., Cho, H.-K., Han, W.-S. SPIE-The International Society for Optical Engineering	10 国際会議録 The study of CD error in mid-local pattern area caused by develop loading effect M.-K. Kang, J.-H. Lee, S.-Y. Kim, B.-G. Kim, S.-G. Woo Society of Photo-optical Instrumentation Engineers
5 国際会議録 Validation of ArF chromeless PSM in the sub-100-nm node DRAM cell Lee, J.-H., Chung, D.-H., Cha, D.-C., Kim, H.-S., Park, J.-S., Nam, D.-G., Woo, S.-K., Cho, H.-S., Han, W.-S. SPIE-The International Society for Optical Engineering	11 国際会議録 Optical performance enhancement technique for 45-nm-node with binary mask J. Jung, H. Kim, J. Lee, S. Choi, W. Han SPIE - The International Society of Optical Engineering
6 国際会議録 Improved modeling of fogging and loading effect correction [5992-165] Lee, S., Kim, B., Han, H., Nam, D., Moon, S., Choi, S., Han, W. SPIE - The International Society of Optical Engineering	12 国際会議録 EUV mask pattern inspection for memory mask fabrication in 45-nm node and below [6349-95] Kim, D. Y., Cho, S. Y., Kim, H., Huh, S. M., Chung, D. H., Cha, B. C., Lee, J. W., Choi, S. W., Han, W. S., Park, K. H., … SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12