Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths

Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths

著者名:

A. Burenkov ( Fraunhofer Institute of Integrated Systems and Device Technology, Germany )
C. Kampen ( Fraunhofer Institute of Integrated Systems and Device Technology, Germany )
J. Lorenz ( Fraunhofer Institute of Integrated Systems and Device Technology, Germany )
H. Ryssel ( Fraunhofer Institute of Integrated Systems and Device Technology, Germany )

掲載資料名:

Micro- and nanoelectronics 2007 : 1-5 October 2007, Zvenigorod, Russia

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

7025

発行年:

2008

開始ページ:

70251J-1

終了ページ:

70251J-12

総ページ数:

12

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819472380 [0819472387]

言語:

英語

請求記号:

P63600/7025

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052656
シリーズID:	PA00000029
会議名:	International Conference on Micro- and Nanoelectronics - ICMNE
回次:	2007
会議開催地:	Zvenigorod, Russia
会議開催年:	2007.10.01-2007.10.05
論文注記:	Micro- and nanoelectronics 2007, 1-5 October 2007, Zvenigorod, Russia - Session 10. Simulation and Modeling, 70251J, 7025-54

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