Comparative analysis of pseudo-potential and tight-binding band structure calculations with an analytical two-band k-p model: conduction band of silicon

Comparative analysis of pseudo-potential and tight-binding band structure calculations with an analytical two-band k-p model: conduction band of silicon

著者名:

V. A. Sverdlov ( Technische Univ. Wien, Austria )
H. Kosina ( Technische Univ. Wien, Austria )
S. Selberherr ( Technische Univ. Wien, Austria )

掲載資料名:

Micro- and nanoelectronics 2007 : 1-5 October 2007, Zvenigorod, Russia

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

7025

発行年:

2008

開始ページ:

70251I-1

終了ページ:

70251I-8

総ページ数:

8

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819472380 [0819472387]

言語:

英語

請求記号:

P63600/7025

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052656
シリーズID:	PA00000029
会議名:	International Conference on Micro- and Nanoelectronics - ICMNE
回次:	2007
会議開催地:	Zvenigorod, Russia
会議開催年:	2007.10.01-2007.10.05
論文注記:	Micro- and nanoelectronics 2007, 1-5 October 2007, Zvenigorod, Russia - Session 10. Simulation and Modeling, 70251I, 7025-53

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